NPN silicon transistor for general-purpose amplification and switching, housed in a TO-92 package with dimensions of 4.30-4.70 mm in length and width, and 12.70 mm in lead length. Rated for a collector-base voltage of 300 V, collector-emitter voltage of 300 V, and emitter-base voltage of 5 V. Continuous collector current is 300 mA, with a power dissipation of 625 mW at 25°C. Operating and storage junction temperature ranges from -55°C to +150°C. Thermal resistance is 200°C/W from junction to ambient and 83.3°C/W from junction to case. DC current gain ranges from 80 to 250 at 10 mA collector current. Transition frequency is 50 MHz. RoHS compliant with lead-free finish. Moisture sensitivity level 1. Epoxy meets UL 94 V-0 flammability rating.
Bipolar (BJT) Transistor NPN 300V 300mA 50MHz 625mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MPSA42-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |