Micro Commercial Components Corp. Single Bipolar Transistors MPS651-AP

Description
Bipolar (BJT) Transistor NPN 60V 2A 75MHz 625mW Through Hole TO-92
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 60V 2A 75MHz 625mW Through Hole TO-92
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - 353-MPS651-APTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
353-MPS651-APTB-ND
Single Bipolar Transistors 353-MPS651-APTB-ND
Bipolar (BJT) Transistor NPN 60V 2A 75MHz 625mW Through Hole TO-92

Bipolar (BJT) Transistor NPN 60V 2A 75MHz 625mW Through Hole TO-92

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1151177-MPS651-AP - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1151177-MPS651-AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1151177-MPS651-AP
Win Source Part Number: 1151177-MPS651-AP Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tape & Box (TB) Standard Package: 2,000 Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 2 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V Frequency - Transition: 75MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92 Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): MPS651AP; ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.21.0095 Mfr: Micro Commercial Co Other Names: 353-MPS651-APTB Product Status: Obsolete

Win Source Part Number: 1151177-MPS651-AP
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tape & Box (TB)
Standard Package: 2,000
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 2 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 1A, 2V
Frequency - Transition: 75MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): MPS651AP;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.21.0095
Mfr: Micro Commercial Co
Other Names: 353-MPS651-APTB
Product Status: Obsolete

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - MPS651-AP - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
MPS651-AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) MPS651-AP
TRANS NPN 60V 2A TO92

TRANS NPN 60V 2A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 353-MPS651-APTB-ND 1151177-MPS651-AP MPS651-AP
Product Name Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-92; SOT3
IC(max) 2000 milliamps 2000 milliamps
Power Gain 75 dB
Operating Frequency 75 MHz
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