PNP silicon transistor in a TO-92 package, rated for a collector-emitter voltage of -60 V, collector current of -0.6 A, and power dissipation of 0.625 W. Operating and storage junction temperature ranges from -55°C to +150°C. Features a dc current gain (hFE) range of 200 to 300 for the H bin, collector-emitter saturation voltage of -0.6 V at -500 mA collector current, and transition frequency of 200 MHz. Meets UL 94 V-0 flammability rating and is RoHS compliant. Moisture sensitivity level is 1.
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MPS2907A-H-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |