PNP silicon transistor in TO-92 package capable of 625 mW power dissipation, with a collector current of -0.6 A, collector-base voltage of -60 V, and operating junction temperature range from -55°C to +150°C. Features collector-emitter breakdown voltage of -60 V, DC current gain (hFE) range of 200 to 300, transition frequency of 200 MHz, and meets UL 94 V-0 flammability rating. RoHS compliant and moisture sensitivity level 1.
Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 625mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MPS2907A-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |