MIP50R12E2TN-BP is an IGBT module with an integrated anti-parallel fast and soft recovery diode, designed for motor drivers, servo amplifiers, and uninterruptible power supplies. It features a 1200 V collector-emitter voltage rating and a continuous collector current of 50 A for inverter configuration, with a total power dissipation of 288 W. The module has a maximum junction temperature of 175°C and meets UL 94 V-0 flammability rating. It is RoHS compliant and supplied in a compact module package with a stray inductance of 60 nH and a weight of 300 g. Thermal resistance from junction to case is 0.29 K/W for the IGBT-inverter leg. The device supports short-circuit capability up to 200 A for 10 μs at 150°C and includes an NTC thermistor for temperature monitoring.
IGBT MODULE 1200V 35A 227W
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MIP50R12E2TN-BPTR-ND |
| Product Name | IGBT Modules |
| Package Type | Module |