The MCU7D6N10YL is an N-channel MOSFET using Split Gate Trench technology, designed for high-efficiency switching applications. It is packaged in a DPAK (TO-252) case with dimensions of 10.40 mm × 6.70 mm × 2.40 mm. The device has a drain-source voltage rating of 100 V, continuous drain current of 75 A at 25°C, and a maximum power dissipation of 104 W. Its low on-resistance is 7.6 mΩ at V_{GS}=10V and I_D=37.5A. Thermal resistance is 1.2°C/W junction-to-case and 50°C/W junction-to-ambient. It meets UL 94 V-0 flammability rating, is halogen-free, and RoHS compliant. The operating junction temperature range is -55°C to +150°C, with a single pulse avalanche energy of 169 mJ.
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The MCU7D6N10YL is an N-channel MOSFET using Split Gate Trench technology, designed for high-efficiency switching applications. It is packaged in a DPAK (TO-252) case with dimensions of 10.40 mm × 6.70 mm × 2.40 mm. The device has a drain-source voltage rating of 100 V, continuous drain current of 75 A at 25°C, and a maximum power dissipation of 104 W. Its low on-resistance is 7.6 mΩ at V_{GS}=10V and I_D=37.5A. Thermal resistance is 1.2°C/W junction-to-case and 50°C/W junction-to-ambient. It meets UL 94 V-0 flammability rating, is halogen-free, and RoHS compliant. The operating junction temperature range is -55°C to +150°C, with a single pulse avalanche energy of 169 mJ.
