Micro Commercial Components Corp. Single FETs, MOSFETs MCU600N65SH-TP

The MCU600N65SH is an N-channel MOSFET designed for high-voltage applications using super-junction technology. It is packaged in a DPAK (TO-252) case with dimensions of 10.40 mm maximum length, 6.70 mm maximum width, and 6.20 mm maximum height. The device has a drain-source voltage rating of 650 V, a continuous drain current of 4.2 A at 100°C, and a maximum power dissipation of 59.5 W. Its on-resistance is specified at 511 to 613 mΩ at 10 V gate voltage and 2.5 A drain current. Thermal resistance junction-to-ambient is 50°C/W, and junction-to-case is 2.1°C/W. Operating junction and storage temperatures range from -55°C to +150°C. The epoxy meets UL 94 V-0 flammability rating, and the device is RoHS compliant and halogen-free. The ordering code -TP indicates tape and reel packaging.