The MCU120N04-TP is an N-channel MOSFET using trench power LV technology, designed for high-efficiency switching applications. It is packaged in a DPAK (TO-252) case with dimensions of 9.80 to 10.40 mm in length and 6.00 to 6.20 mm in height. The device has a continuous drain current rating of 120 A at 25°C and 76 A at 100°C, with a drain-source voltage rating of 40 V and a gate-source voltage rating of ±20 V. It dissipates up to 125 W with a thermal resistance of 50°C/W junction-to-ambient. The junction and storage temperature range is -55°C to +150°C. The part is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. It has a typical on-resistance of 3.8 mΩ at 4.5 V gate drive and 10 A drain current, with a total gate charge of 92.7 nC.
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The MCU120N04-TP is an N-channel MOSFET using trench power LV technology, designed for high-efficiency switching applications. It is packaged in a DPAK (TO-252) case with dimensions of 9.80 to 10.40 mm in length and 6.00 to 6.20 mm in height. The device has a continuous drain current rating of 120 A at 25°C and 76 A at 100°C, with a drain-source voltage rating of 40 V and a gate-source voltage rating of ±20 V. It dissipates up to 125 W with a thermal resistance of 50°C/W junction-to-ambient. The junction and storage temperature range is -55°C to +150°C. The part is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. It has a typical on-resistance of 3.8 mΩ at 4.5 V gate drive and 10 A drain current, with a total gate charge of 92.7 nC.
