Micro Commercial Components Corp. MOSFET MCU05N60-TP

Description
MOSFET N-Ch Enh FET 600Vds 4.5A 30Vgss 1.4Vds
Description
MOSFET N-Ch Enh FET 600Vds 4.5A 30Vgss 1.4Vds
Datasheet
Datasheet Summary
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MCU05N60-TP is an N-channel MOSFET designed for switching applications, featuring a 600 V drain-source voltage rating, 4.5 A continuous drain current, and a maximum power dissipation of 120 W with an infinite heat sink. It has a typical on-resistance of 2.5 Ω at 10 V gate-source voltage and single pulsed avalanche energy of 210 mJ. The device is packaged in a TO-220 case with dimensions of 9.80-10.40 mm length and 6.00-6.20 mm height, and meets UL 94 V-0 flammability rating and RoHS compliance. Thermal resistance is 100 °C/W junction to ambient, operating temperature range is -55 °C to +150 °C, and it is moisture sensitivity level 1. The part number includes a trailing '-TP' suffix indicating tape and reel packaging, consistent with the series described.

Datasheet Summary
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MCU05N60-TP is an N-channel MOSFET designed for switching applications, featuring a 600 V drain-source voltage rating, 4.5 A continuous drain current, and a maximum power dissipation of 120 W with an infinite heat sink. It has a typical on-resistance of 2.5 Ω at 10 V gate-source voltage and single pulsed avalanche energy of 210 mJ. The device is packaged in a TO-220 case with dimensions of 9.80-10.40 mm length and 6.00-6.20 mm height, and meets UL 94 V-0 flammability rating and RoHS compliance. Thermal resistance is 100 °C/W junction to ambient, operating temperature range is -55 °C to +150 °C, and it is moisture sensitivity level 1. The part number includes a trailing '-TP' suffix indicating tape and reel packaging, consistent with the series described.

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Sheung Wan, Hong Kong
MOSFET N-Ch Enh FET 600Vds 4.5A 30Vgss 1.4Vds

MOSFET N-Ch Enh FET 600Vds 4.5A 30Vgss 1.4Vds

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MCU05N60-TP
Product Name MOSFET
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