MCTL1D4N10YH is an N-channel MOSFET with Split Gate Trench technology, designed for high-efficiency switching applications. It is packaged in a TOLL-8L case with dimensions of 10.28 to 10.58 mm in length, 9.70 to 10.10 mm in width, and 3.00 to 3.30 mm in height. The device supports a drain-source voltage of 100 V and a gate-source voltage of ±20 V, with a continuous drain current of 300 A at 25°C and 189 A at 100°C. It has a typical on-resistance of 1.1 mΩ at 10 V gate voltage and 50 A drain current, and a single-pulsed avalanche energy rating of 1800 mJ. The thermal resistance from junction to case is 0.42°C/W, and from junction to ambient is 40°C/W on a standard FR-4 board. The part is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. Operating and storage junction temperatures range from -55°C to +150°C.
N-CHANNEL MOSFET,TOLL-8L
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCTL1D4N10YH-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |