Micro Commercial Components Corp. MOSFET MCP04N60

Description
MOSFET N-Ch FET 600Vds 4.0A 30Vgss 125pF
Description
MOSFET N-Ch FET 600Vds 4.0A 30Vgss 125pF
Datasheet
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MCP04N60 is an N-channel MOSFET designed for switching applications, packaged in a TO-220 case with dimensions of 14.22-15.88 mm in height, 9.65-10.67 mm in width, and 12.70-14.73 mm in lead spacing. It has a drain-source voltage rating of 600 V, a continuous drain current of 4.0 A, and a drain-source on-resistance of 2-3 Ω at 10 V gate voltage and 2 A drain current. The device features a specified avalanche energy of 260 mJ, gate-source voltage limit of ±30 V, and thermal resistance of 62.5°C/W. It meets UL 94 V-0 flammability rating, is RoHS compliant with the "P" suffix, and operates across a junction temperature range of -55°C to +150°C.

Datasheet Summary
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MCP04N60 is an N-channel MOSFET designed for switching applications, packaged in a TO-220 case with dimensions of 14.22-15.88 mm in height, 9.65-10.67 mm in width, and 12.70-14.73 mm in lead spacing. It has a drain-source voltage rating of 600 V, a continuous drain current of 4.0 A, and a drain-source on-resistance of 2-3 Ω at 10 V gate voltage and 2 A drain current. The device features a specified avalanche energy of 260 mJ, gate-source voltage limit of ±30 V, and thermal resistance of 62.5°C/W. It meets UL 94 V-0 flammability rating, is RoHS compliant with the "P" suffix, and operates across a junction temperature range of -55°C to +150°C.

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Sheung Wan, Hong Kong
MOSFET
MCP04N60
MOSFET MCP04N60
MOSFET N-Ch FET 600Vds 4.0A 30Vgss 125pF

MOSFET N-Ch FET 600Vds 4.0A 30Vgss 125pF

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number MCP04N60
Product Name MOSFET
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