The MCG6D9N04YHQ is an automotive-qualified N-channel MOSFET using split gate trench technology, housed in a PDFN3333 package measuring 3.3 mm × 3.3 mm. It has a drain-source voltage rating of 40 V, continuous drain current of 50 A at 25°C, and a maximum junction temperature of 175°C. The device features an ultra-low on-resistance of 5.1 to 6.9 mΩ at 10 V gate drive and 20 A drain current, with a thermal resistance of 3°C/W from junction to case. It meets AEC-Q100 qualifications, has a UL 94 V-0 epoxy rating, and is RoHS compliant. The part is moisture-sensitive level 1 and halogen-free.
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The MCG6D9N04YHQ is an automotive-qualified N-channel MOSFET using split gate trench technology, housed in a PDFN3333 package measuring 3.3 mm × 3.3 mm. It has a drain-source voltage rating of 40 V, continuous drain current of 50 A at 25°C, and a maximum junction temperature of 175°C. The device features an ultra-low on-resistance of 5.1 to 6.9 mΩ at 10 V gate drive and 20 A drain current, with a thermal resistance of 3°C/W from junction to case. It meets AEC-Q100 qualifications, has a UL 94 V-0 epoxy rating, and is RoHS compliant. The part is moisture-sensitive level 1 and halogen-free.
