P-channel MOSFET in a DFN3333 package measuring 3.2 mm x 3.3 mm with a drain-source voltage rating of -30 V, continuous drain current of -75 A at 25°C and -47 A at 100°C, and power dissipation of 50 W. Thermal resistance is 2.48°C/W junction-to-case and 60°C/W junction-to-ambient. The device features a gate threshold voltage range of -1.3 V to -2.3 V, on-resistance of 4.7 mΩ at -10 V gate drive, and total gate charge of 113 nC. It meets UL 94 V-0 flammability rating and is RoHS compliant and halogen-free. Operating and storage junction temperature range is -55°C to +150°C. The part number includes a trailing tape and reel packing code, not detailed in the specifications. Summary reflects the MCG6D0P03L series characteristics.
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P-channel MOSFET in a DFN3333 package measuring 3.2 mm x 3.3 mm with a drain-source voltage rating of -30 V, continuous drain current of -75 A at 25°C and -47 A at 100°C, and power dissipation of 50 W. Thermal resistance is 2.48°C/W junction-to-case and 60°C/W junction-to-ambient. The device features a gate threshold voltage range of -1.3 V to -2.3 V, on-resistance of 4.7 mΩ at -10 V gate drive, and total gate charge of 113 nC. It meets UL 94 V-0 flammability rating and is RoHS compliant and halogen-free. Operating and storage junction temperature range is -55°C to +150°C. The part number includes a trailing tape and reel packing code, not detailed in the specifications. Summary reflects the MCG6D0P03L series characteristics.
