Micro Commercial Components Corp. Single FETs, MOSFETs MCG35P02-TP

The MCG35P02 is a P-channel MOSFET using trench power LV technology for high-speed switching and low on-resistance, housed in a DFN3333 package measuring 3.20 to 3.30 mm on each side. It supports a maximum drain-source voltage of -20 V, continuous drain current of -35 A at 25°C, and total power dissipation of 69 W. Thermal resistance from junction to case is 1.8°C/W, and junction-to-ambient is 122°C/W on a 1 in² 2 oz copper pad. The device operates from -55°C to +150°C, features a gate threshold voltage of -0.4 to -1.0 V, and a drain-source on-resistance of 10 to 29 mΩ depending on gate drive. It is halogen-free, RoHS compliant, and meets UL 94 V-0 flammability rating.