The MCG25P03 is a P-channel MOSFET using trench power LV technology, optimized for low-voltage switching applications. It is housed in a DFN3333 package measuring 3.20 to 3.30 mm on each side. The device has a drain-source voltage rating of -30 V, a continuous drain current of -25 A at 25°C and -15 A at 100°C, and a maximum power dissipation of 62.5 W. Thermal resistance is 54°C/W junction-to-ambient and 2°C/W junction-to-case. It operates from -55°C to +150°C and is RoHS compliant with a halogen-free, UL 94 V-0 epoxy encapsulation. The device supports an avalanche energy of 60.5 mJ and has a total gate charge of 28 nC. The 'TP' suffix indicates tape-and-reel packaging, consistent with the series' ordering information.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCG25P03-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | P-Channel |