Micro Commercial Components Corp. Single FETs, MOSFETs MCG25P03-TP

Description
MOSFET
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Description
MOSFET
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Datasheet
Datasheet Summary
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The MCG25P03 is a P-channel MOSFET using trench power LV technology, optimized for low-voltage switching applications. It is housed in a DFN3333 package measuring 3.20 to 3.30 mm on each side. The device has a drain-source voltage rating of -30 V, a continuous drain current of -25 A at 25°C and -15 A at 100°C, and a maximum power dissipation of 62.5 W. Thermal resistance is 54°C/W junction-to-ambient and 2°C/W junction-to-case. It operates from -55°C to +150°C and is RoHS compliant with a halogen-free, UL 94 V-0 epoxy encapsulation. The device supports an avalanche energy of 60.5 mJ and has a total gate charge of 28 nC. The 'TP' suffix indicates tape-and-reel packaging, consistent with the series' ordering information.

Datasheet Summary
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The MCG25P03 is a P-channel MOSFET using trench power LV technology, optimized for low-voltage switching applications. It is housed in a DFN3333 package measuring 3.20 to 3.30 mm on each side. The device has a drain-source voltage rating of -30 V, a continuous drain current of -25 A at 25°C and -15 A at 100°C, and a maximum power dissipation of 62.5 W. Thermal resistance is 54°C/W junction-to-ambient and 2°C/W junction-to-case. It operates from -55°C to +150°C and is RoHS compliant with a halogen-free, UL 94 V-0 epoxy encapsulation. The device supports an avalanche energy of 60.5 mJ and has a total gate charge of 28 nC. The 'TP' suffix indicates tape-and-reel packaging, consistent with the series' ordering information.

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Single FETs, MOSFETs - 353-MCG25P03-TPTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
353-MCG25P03-TPTR-ND
Single FETs, MOSFETs 353-MCG25P03-TPTR-ND
MOSFET

MOSFET

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-MCG25P03-TPTR-ND
Product Name Single FETs, MOSFETs
Polarity P-Channel
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