MCG20N06HE3-TP is an AEC-Q101 qualified N-channel MOSFET in a PDFN3333 package, designed for high-density switching applications. It has a drain-source voltage rating of 60 V, a continuous drain current of 20 A at 25°C, and a maximum power dissipation of 32 W. The device features a typical on-resistance of 22 mΩ at 10 V gate-source voltage and 25 mΩ at 4.5 V, with a gate threshold voltage between 1.0 V and 2.5 V. Thermal resistance is 60°C/W junction-to-ambient and 3.9°C/W junction-to-case. It supports a pulsed drain current up to 80 A and a single-pulsed avalanche energy of 30 mJ. The operating junction temperature range is -55°C to +150°C. The package is RoHS compliant and meets UL 94 V-0 flammability rating. Moisture sensitivity level is 1 and the device is halogen-free.
N-CHANNEL MOSFET,PDFN3333
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCG20N06HE3-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |