The MCB70N10YA-TP is an N-channel MOSFET using Split Gate Trench technology, housed in a D2-PAK package with dimensions of 9.40 mm maximum length, 10.60 mm maximum width, and 15.87 mm maximum height. It has a drain-source voltage rating of 100 V, a continuous drain current of 70 A at 25°C, and a total power dissipation of 125 W. The device operates from -55°C to +150°C, with a thermal resistance of 1.0°C/W from junction to case and 40°C/W from junction to ambient. The gate-source threshold voltage ranges from 1.0 V to 3.0 V, and the on-resistance is 8.6 mΩ at 10 V gate drive. The body diode has a forward voltage of 1.3 V at 20 A, and the total gate charge is 41.2 nC. The epoxy meets UL 94 V-0 flammability rating, and the part is RoHS compliant and halogen-free.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCB70N10YA-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |