Micro Commercial Components Corp. Single FETs, MOSFETs MCB3D0N10Y-TP

The MCB3D0N10Y is an N-channel MOSFET with Split Gate Trench technology, packaged in a D2-PAK case measuring 9.40 mm by 15.87 mm, designed for high-efficiency switching applications. It has a drain-source voltage rating of 100 V and a continuous drain current of 190 A at 25°C, rising to 134 A at 100°C. The device supports a pulsed drain current of 760 A and a total power dissipation of 230 W, with a junction-to-case thermal resistance of 0.65°C/W and junction-to-ambient thermal resistance of 40°C/W. The gate-source voltage rating is ±20 V, and the on-resistance is 2.4 mΩ at VGS=10 V and ID=50 A. It meets UL 94 V-0 flammability standards and is RoHS compliant. The operating and storage junction temperature range is -55°C to +175°C. The part is halogen-free and moisture sensitive level 1.