The MCB3D0N06YL is an N-channel MOSFET with split gate trench technology, packaged in a D2-PAK, measuring 15.87mm x 10.60mm x 9.40mm. It has a drain-source voltage rating of 60V, continuous drain current of 146A at 25°C, and total power dissipation of 125W. Thermal resistance is 1.2°C/W from junction to case and 43°C/W from junction to ambient. The device features low on-resistance (4.4mΩ max at VGS=4.5V, ID=25A), a single pulse avalanche energy of 272mJ, and operates from -55°C to +175°C. It is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability rating. The -TP suffix indicates tape and reel packaging.
N-CHANNEL MOSFET,D2-PAK
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCB3D0N06YL-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |