Micro Commercial Components Corp. Single FETs, MOSFETs MCB2D8N10YHR-TP

N-channel MOSFET in a D2-PAK package, designed for high-current switching applications with a 100 V drain-source voltage rating and a continuous drain current of 250 A at 25°C. The device features split gate trench technology, low on-resistance of 2.3 mΩ at 20 A and 10 V gate-source voltage, and a thermal resistance of 42°C/W junction to ambient. It operates over a junction temperature range of -55°C to +175°C, is RoHS compliant, and meets UL 94 V-0 flammability rating. The D2-PAK package dimensions are 8.40 to 9.40 mm in length and 9.60 to 10.60 mm in width. The part includes a body diode with a forward voltage of 1.2 V at 20 A and a reverse recovery time of 93 ns. The device is halogen-free and suitable for high-reliability applications.