The MCB200N06YHE3 is an N-channel MOSFET designed for high-efficiency switching applications. It is housed in a D2-PAK package with dimensions of 9.60 to 10.60 mm in width and 14.60 to 15.87 mm in length. The device has a drain-source voltage rating of 60 V, a continuous drain current of 200 A at 25°C, and a pulsed drain current of 800 A. The junction temperature operates from -55°C to +150°C, with a thermal resistance of 29°C/W from junction to ambient. It meets AEC-Q101 qualification standards, is RoHS compliant, and has a UL 94 V-0 flame rating. The part features split gate trench technology and is halogen-free.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCB200N06YHE3-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |