The MCACD60N04Y is a dual N-channel MOSFET in a PDFN5060-8D package, designed for high-efficiency power switching applications. It has a drain-source voltage rating of 40 V and continuous drain current ratings of 60 A at 25°C and 42 A at 100°C. The device features split gate trench technology, with a maximum total power dissipation of 50 W and thermal resistance of 60°C/W junction-to-ambient. It meets UL 94 V-0 flammability rating and is RoHS compliant. The operating junction temperature range is -55°C to +175°C. The on-resistance is specified up to 15 mΩ at 10 A drain current and 10 V gate-source voltage.
Datasheet Summary Powered by GS/AI
The MCACD60N04Y is a dual N-channel MOSFET in a PDFN5060-8D package, designed for high-efficiency power switching applications. It has a drain-source voltage rating of 40 V and continuous drain current ratings of 60 A at 25°C and 42 A at 100°C. The device features split gate trench technology, with a maximum total power dissipation of 50 W and thermal resistance of 60°C/W junction-to-ambient. It meets UL 94 V-0 flammability rating and is RoHS compliant. The operating junction temperature range is -55°C to +175°C. The on-resistance is specified up to 15 mΩ at 10 A drain current and 10 V gate-source voltage.
