Dual N-channel MOSFET in a PDFN5060-8D package, designed for high-density switching applications with a 40 V drain-source voltage rating and continuous drain current of 50 A at 25°C. Features split gate trench technology with a typical on-resistance of 5.3 mΩ at 10 V gate drive, and a thermal resistance of 3°C/W junction to case. AEC-Q101 qualified, RoHS compliant, and meets UL 94 V-0 flammability rating. Operating junction temperature range is -55°C to +150°C. The -TP suffix indicates tape and reel packaging, which is consistent with the series.
MOSFET 2N-CH 40V 50A 8PDFN
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCACD50N04YHE3-TPTR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 8-PowerLDFN |