Micro Commercial Components Corp. FET, MOSFET Arrays MCACD12NP10YHE3-TP

Dual N- and P-channel MOSFET in a PDFN5060-8D package, rated for 100 V drain-source voltage and designed for high-density switching applications. The N-channel supports 40 A continuous drain current at 25°C and 25 A at 100°C, with a maximum R_DS(ON) of 24 mΩ at 10 V gate drive; the P-channel supports 12 A continuous drain current at 25°C and 7.6 A at 100°C, with a maximum R_DS(ON) of 115 mΩ at -10 V gate drive. Both devices feature AEC-Q101 qualification, operate from -55°C to 150°C junction temperature, and meet UL 94 V-0 flammability and RoHS standards. Thermal resistance is 1.2°C/W (N-channel) and 1.8°C/W (P-channel) junction to case. Package dimensions are 5.15 mm to 5.55 mm in length and 5.95 mm to 6.35 mm in width.