The MCAC8D5N10Y is an N-channel MOSFET using Split Gate Trench technology, packaged in a DFN5060 case measuring 5.64 mm × 6.35 mm. It has a 100 V drain-source voltage rating, continuous drain current of 85 A at 25°C, and a maximum power dissipation of 125 W. Thermal resistance is 55°C/W junction-to-ambient and 1°C/W junction-to-case. The device features a low on-resistance of 6.8 to 10 mΩ at 10 V gate drive and supports pulsed drain current up to 340 A. It meets UL 94 V-0 flammability rating, is RoHS compliant, and operates from -55°C to +150°C junction temperature. The part is rated for single-pulsed avalanche energy of 110 mJ and includes a body diode with 50 A forward current and 41 ns reverse recovery time.
N-CHANNEL MOSFET,DFN5060
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCAC8D5N10Y-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |