Micro Commercial Components Corp. Single FETs, MOSFETs MCAC80N10YA-TP

N-channel MOSFET in a DFN5060 package for switching applications, rated for 100 V drain-source voltage and 80 A continuous drain current, with a power dissipation of 35 W and thermal resistance of 3.5°C/W junction to case. Operating junction and storage temperatures range from -55°C to +150°C. The device features a split gate trench structure, RoHS compliance, and epoxy meeting UL 94 V-0 flammability rating. Gate threshold voltage ranges from 2 V to 4 V, and drain-source on-resistance is 4.3 mΩ at 10 V gate-source voltage and 20 A drain current. Total gate charge is 71 nC, with input, output, and reverse transfer capacitances of 3987 pF, 594 pF, and 37 pF respectively, measured at 50 V drain-source voltage and 1 MHz frequency.