The MCAC80N04Y is an N-channel MOSFET using Split Gate Trench technology, designed for high-current switching applications. It is packaged in a DFN5060 case measuring 6.35 mm x 5.64 mm with a maximum height of 1.50 mm. The device has a continuous drain current rating of 80 A at 25°C and 51 A at 100°C, a drain-source voltage rating of 40 V, and a total power dissipation of 104.2 W. Thermal resistance is 1.2°C/W from junction to case and 50°C/W from junction to ambient on a 1 in² FR-4 board. It meets UL 94 V-0 flammability rating and is RoHS compliant with a halogen-free epoxy. Operating junction temperature range is -55°C to +150°C. The device is rated for 320 A pulsed drain current and 200 mJ avalanche energy.
MOSFET N-CH 40 80A DFN5060
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCAC80N04Y-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |