Micro Commercial Components Corp. Single FETs, MOSFETs MCAC5D0N10YH-TP

N-channel MOSFET with 100 V drain-source voltage and 150 A continuous drain current at 25°C, designed for high-power switching applications. Housed in a DFN5060 package with dimensions of 6.35 mm × 5.55 mm, it features split gate trench technology and a thermal resistance of 44°C/W junction to ambient. The device supports a maximum junction temperature of 150°C, has a drain-source on-resistance of 3.8 mΩ at 10 V gate-source voltage and 20 A drain current, and is RoHS compliant with a halogen-free, UL 94 V-0 epoxy encapsulation.