The MCAC55N10Y is an N-channel MOSFET using split gate trench technology, designed for high-efficiency switching applications. It is packaged in a DFN5060 with dimensions of 6.35 mm maximum length and 5.55 mm maximum width. The device features a 100 V drain-source voltage rating, continuous drain current of 55 A at 25°C and 35 A at 100°C, and a maximum power dissipation of 89 W. It has a low on-resistance of 9 mΩ at V_GS=10 V and I_D=20 A, with a gate threshold voltage between 1 V and 3 V. The thermal resistance from junction to case is 1.4°C/W, and junction temperature ranges from -55°C to +150°C. The part is RoHS compliant, halogen-free, and meets UL 94 V-0 flammability standards. The -TP suffix indicates tape and reel packaging, which is consistent with the series.
MOSFET N-CH 100 55A DFN5060
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-MCAC55N10Y-TPTR-ND |
| Product Name | Single FETs, MOSFETs |
| Polarity | N-Channel |