PNP bipolar transistor for general-purpose amplification, housed in a TO-92S package with dimensions of 1.42-1.62 mm (A), 3.90-4.10 mm (B), and 3.05-3.25 mm (C). It has a collector-base voltage rating of -50 V, collector-emitter voltage of -50 V, and collector current of -150 mA. Power dissipation is 400 mW, with a junction temperature range of -55°C to +150°C. Transition frequency is 80 MHz, DC current gain (hFE) ranges from 120 to 240 for the Y-grade variant, and thermal resistance is 312°C/W. The device is RoHS compliant, meets UL 94 V-0 flammability rating, and has moisture sensitivity level 1.
Bipolar (BJT) Transistor PNP 50V 150mA 80MHz 400mW Through Hole TO-92S
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-KTA1267-Y-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |