Micro Commercial Components Corp. Single Bipolar Transistors KTA1267-O-AP

PNP bipolar transistor for general-purpose amplification, housed in a TO-92S package with dimensions of 1.42-1.62 mm in height, 3.90-4.10 mm in body width, and 3.05-3.25 mm in lead spacing. It operates with a collector-base and collector-emitter voltage of -50 V, emitter-base voltage of -5 V, and a maximum collector current of -150 mA. Power dissipation is rated at 400 mW with a thermal resistance of 312°C/W. The device has a DC current gain (hFE) range of 70-140 for the O grade, a transition frequency of 80 MHz, and a collector-emitter saturation voltage of -0.3 V at -100 mA collector current. Junction and storage temperature range is -55°C to +150°C. It is RoHS compliant and meets UL 94 V-0 flammability rating.