KSD471A-G-AP is an NPN silicon bipolar transistor in a TO-92 package with a collector current rating of 1 A and a collector power dissipation of 800 mW. It has a collector-emitter voltage rating of 30 V, a collector-base voltage rating of 40 V, and an emitter-base voltage rating of 5.0 V. The transistor features a minimum current gain (hFE) of 200, a collector-emitter saturation voltage of 0.5 V at 1 A collector current and 0.1 A base current, and a transition frequency of 130 MHz. The device meets UL 94 V-0 flammability rating, is RoHS compliant, and has a junction temperature range of -55°C to +150°C. It is supplied in ammo pack packaging with 20,000 pieces per carton.
Bipolar (BJT) Transistor NPN 30V 1A 130MHz 800mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-KSD471A-G-APTB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |