Micro Commercial Components Corp. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors DTC114ESA-AP

Description
Win Source Part Number: 1354284-DTC114ESA-AP Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Fake Threat In the Open Market: 35 pct. MSL Level: 1 (Unlimited) Mfr: Micro Commercial Co Package: Tape & Box (TB) Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S Base Product Number: DTC114 Mounting Type: Through Hole HTSUS: 8541.21.0075 ECCN: EAR99 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW
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Description
Win Source Part Number: 1354284-DTC114ESA-AP Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Fake Threat In the Open Market: 35 pct. MSL Level: 1 (Unlimited) Mfr: Micro Commercial Co Package: Tape & Box (TB) Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S Base Product Number: DTC114 Mounting Type: Through Hole HTSUS: 8541.21.0075 ECCN: EAR99 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW
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Suppliers

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Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors - 1354284-DTC114ESA-AP - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
1354284-DTC114ESA-AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors 1354284-DTC114ESA-AP
Win Source Part Number: 1354284-DTC114ESA-AP Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Fake Threat In the Open Market: 35 pct. MSL Level: 1 (Unlimited) Mfr: Micro Commercial Co Package: Tape & Box (TB) Product Status: Obsolete Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads) Supplier Device Package: TO-92S Base Product Number: DTC114 Mounting Type: Through Hole HTSUS: 8541.21.0075 ECCN: EAR99 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250 MHz Power - Max: 300 mW

Win Source Part Number: 1354284-DTC114ESA-AP
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors
Fake Threat In the Open Market: 35 pct.
MSL Level: 1 (Unlimited)
Mfr: Micro Commercial Co
Package: Tape & Box (TB)
Product Status: Obsolete
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Supplier Device Package: TO-92S
Base Product Number: DTC114
Mounting Type: Through Hole
HTSUS: 8541.21.0075
ECCN: EAR99
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250 MHz
Power - Max: 300 mW

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - 353-DTC114ESA-APTB-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
353-DTC114ESA-APTB-ND
Single, Pre-Biased Bipolar Transistors 353-DTC114ESA-APTB-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 50V 100mA 250MHz 300mW Through Hole TO-92S

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 50V 100mA 250MHz 300mW Through Hole TO-92S

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - DTC114ESA-AP - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
DTC114ESA-AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) DTC114ESA-AP
TRANS PREBIAS NPN 50V TO92S

TRANS PREBIAS NPN 50V TO92S

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 1354284-DTC114ESA-AP 353-DTC114ESA-APTB-ND DTC114ESA-AP
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased Bipolar Transistors Single, Pre-Biased Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-92; SOT3 TO-92; TO-226-3, TO-92-3 Short Body, Formed Leads
IC(max) 100 milliamps 100 milliamps
Power Gain 30 dB
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