Micro Commercial Components Corp. Bipolar Transistors - BJT D965-R

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Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT
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The D965-R is an NPN bipolar junction transistor in a TO-92 package, designed for general-purpose switching and amplification applications. It has a continuous collector current rating of 5 A, a collector-emitter voltage rating of 22 V, and a total device power dissipation of 750 mW at 25°C. The operating and storage junction temperatures range from -55°C to +150°C. The transistor features a DC current gain (hFE) between 340 and 950 at a collector current of 500 mA and a collector-emitter voltage of 2 V. The device meets UL 94 V-0 flammability standards and has a moisture sensitivity level of 1. It is lead-free and RoHS compliant when designated with the "P" suffix. The part has a collector-emitter saturation voltage of up to 0.35 V at 3 A collector current and 100 mA base current.

Datasheet Summary
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The D965-R is an NPN bipolar junction transistor in a TO-92 package, designed for general-purpose switching and amplification applications. It has a continuous collector current rating of 5 A, a collector-emitter voltage rating of 22 V, and a total device power dissipation of 750 mW at 25°C. The operating and storage junction temperatures range from -55°C to +150°C. The transistor features a DC current gain (hFE) between 340 and 950 at a collector current of 500 mA and a collector-emitter voltage of 2 V. The device meets UL 94 V-0 flammability standards and has a moisture sensitivity level of 1. It is lead-free and RoHS compliant when designated with the "P" suffix. The part has a collector-emitter saturation voltage of up to 0.35 V at 3 A collector current and 100 mA base current.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
D965-R
Bipolar Transistors - BJT D965-R
Bipolar Transistors - BJT

Bipolar Transistors - BJT

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number D965-R
Product Name Bipolar Transistors - BJT
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