Dual N-channel MOSFET in SOT-363S package, rated for 60 V drain-source voltage and 0.32 W power dissipation, with an operating junction temperature range of -55°C to +150°C and a thermal resistance of 395°C/W. ESD protected to 1500 V and RoHS compliant. Continuous drain current is 0.22 A at 25°C. Drain-source on-resistance is 1.2 Ω at 10 V gate voltage and 0.5 A drain current. Input, output, and reverse transfer capacitances are 29.5 pF, 4.4 pF, and 3 pF respectively. Total gate charge is 1.2 nC, with a body diode forward voltage of 1.3 V and reverse recovery time of 9.4 ns. Package conforms to SOT-363S dimensions.
DUAL N-CHANNEL MOSFET,SOT-363S
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-BSS138AKDWS-TPTR-ND |
| Product Name | FET, MOSFET Arrays |
| Package Type | 6-TSSOP, SC-88, SOT-363 |