Micro Commercial Components Corp. Single Bipolar Transistors BC848AL3-TP

NPN silicon transistor in a DFN1006-3 package measuring 1.075 mm max length and 0.675 mm max width, rated for a collector-emitter voltage of 30 V, collector current of 100 mA, and power dissipation of 150 mW at 25°C. Operating and storage junction temperature range is -55°C to +150°C. Thermal resistance is 833 °C/W. Emitter-base breakdown voltage is 5 V. DC current gain (hFE) ranges from 110 to 220 at 5 V and 2 mA collector current. Collector-emitter saturation voltage is 0.2 V at 100 mA collector and 5 mA base current. RoHS compliant and halogen free, with moisture sensitivity level 1. Epoxy meets UL 94 V-0 flammability rating.