Micro Commercial Components Corp. Single Bipolar Transistors BC639-16-AP

Description
Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1W Through Hole TO-92
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Description
Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1W Through Hole TO-92
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Datasheet
Datasheet Summary
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NPN silicon transistor in TO-92 package for general-purpose amplification and switching, rated for 80 V collector-emitter voltage, 1 A continuous collector current, and 1 W power dissipation with a junction temperature range of -55℃ to +150℃ and thermal resistance of 125℃/W. DC current gain (hFE) ranges from 100 to 250 at 150 mA collector current. RoHS compliant with lead-free finish. Epoxy encapsulation meets UL 94 V-0 flammability rating. Moisture sensitivity level 1. Packaging is ammo packing.

Datasheet Summary
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NPN silicon transistor in TO-92 package for general-purpose amplification and switching, rated for 80 V collector-emitter voltage, 1 A continuous collector current, and 1 W power dissipation with a junction temperature range of -55℃ to +150℃ and thermal resistance of 125℃/W. DC current gain (hFE) ranges from 100 to 250 at 150 mA collector current. RoHS compliant with lead-free finish. Epoxy encapsulation meets UL 94 V-0 flammability rating. Moisture sensitivity level 1. Packaging is ammo packing.

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Single Bipolar Transistors - 353-BC639-16-APTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
353-BC639-16-APTB-ND
Single Bipolar Transistors 353-BC639-16-APTB-ND
Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1W Through Hole TO-92

Bipolar (BJT) Transistor NPN 80V 1A 100MHz 1W Through Hole TO-92

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Technical Specifications

  DigiKey
Product Category Transistors
Product Number 353-BC639-16-APTB-ND
Product Name Single Bipolar Transistors
Polarity NPN
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