NPN silicon bipolar transistor for amplification, packaged in TO-92 with dimensions of 4.30-4.70 mm in width and length, and 12.70 mm in height, supporting a continuous collector current of 0.1 A and power dissipation of 0.625 W at 25°C. Operating junction and storage temperatures range from -55°C to +150°C. Collector-emitter voltage rating is 65 V, collector-base voltage is 80 V, and emitter-base voltage is 6 V. DC current gain (hFE) ranges from 110 to 220, with a transition frequency of 150-300 MHz. Features epoxy meeting UL 94 V-0 flammability rating, RoHS compliance, and moisture sensitivity level 1. Thermal resistance is 200°C/W junction to ambient and 83.3°C/W junction to case.
Bipolar (BJT) Transistor NPN 65V 100mA 300MHz 625mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-BC546A-APTB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |