Micro Commercial Components Corp. Single Bipolar Transistors BC337-40-AP

Description
Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - BC337-40-APMSTB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BC337-40-APMSTB-ND
Single Bipolar Transistors BC337-40-APMSTB-ND
Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92

Bipolar (BJT) Transistor NPN 45V 800mA 210MHz 625mW Through Hole TO-92

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - BC337-40-AP - 1022339-BC337-40-AP - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - BC337-40-AP
1022339-BC337-40-AP
TRANSISTORS - Transistors (BJT) - Single - BC337-40-AP 1022339-BC337-40-AP
Manufacturer: Micro Commercial Co Win Source Part Number: 1022339-BC337-40-AP Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 210MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-92 Maximum Current Collector: 800mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 700mV @ 50mA, 500mA Collector Cut-off Current(Max): 200nA Typical Gain (hFE) (Min): 250 @ 100mA, 1V Maximum Power Dissipation: 625mW Popularity: Medium Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient Quantity per package: 2k pcs

Manufacturer: Micro Commercial Co
Win Source Part Number: 1022339-BC337-40-AP
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 210MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92
Maximum Current Collector: 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 700mV @ 50mA, 500mA
Collector Cut-off Current(Max): 200nA
Typical Gain (hFE) (Min): 250 @ 100mA, 1V
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient
Quantity per package: 2k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BC337-40-AP
Bipolar Transistors - BJT BC337-40-AP
Bipolar Transistors - BJT NPN -0.8A 0.625W

Bipolar Transistors - BJT NPN -0.8A 0.625W

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC337-40-AP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC337-40-AP
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC337-40-AP
TRANS NPN 45V 0.8A TO92

TRANS NPN 45V 0.8A TO92

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC337-40-APMSTB-ND 1022339-BC337-40-AP BC337-40-AP BC337-40-AP
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - BC337-40-AP Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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