PNP silicon transistor in a TO-92 package, rated for a collector-emitter voltage of -25 V, continuous collector current of -1.5 A, and power dissipation of 1 W at 25°C. Operating junction and storage temperature ranges are -55°C to +150°C. Thermal resistance is 125°C/W. Junction-to-ambient power derating is specified with a linear curve up to 100°C ambient temperature. Features a DC current gain (hFE) range of 160-300 for the C grade, collector-emitter saturation voltage of -0.5 V at -800 mA collector current, and transition frequency of 100 MHz. RoHS compliant. Moisture sensitivity level 1. Epoxy meets UL 94 V-0 flammability rating. Dimensions are 4.30-4.70 mm in body width, 12.70 mm in lead length, and 0.38-0.55 mm in lead diameter. The part is supplied in bulk packaging (BP).
Bipolar (BJT) Transistor PNP 25V 1.5A 100MHz 1W Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-8550SS-C-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |