Micro Commercial Components Corp. Single Bipolar Transistors 8050SS-D-AP

NPN silicon transistor in TO-92 package, rated for 25 V collector-emitter voltage, 1.5 A continuous collector current, and 1 W power dissipation, with a junction temperature range of -55°C to +150°C and thermal resistance of 125°C/W. Features a DC current gain (hFE) range of 160 to 300 for the D bin, collector-emitter saturation voltage of 0.5 V at 800 mA collector current, and transition frequency of 100 MHz. RoHS compliant with lead-free finish. Moisture sensitivity level 1 and epoxy meets UL 94 V-0.