NPN silicon bipolar transistor in a TO-92MOD plastic package, rated for 100V collector-emitter voltage, 1A collector current, and 900mW power dissipation. The device has a DC current gain (hFE) range of 160 to 320, collector-emitter saturation voltage of 1V at 500mA collector current, and a transition frequency of 140MHz. Operating and storage junction temperature ranges from -55°C to +150°C. Moisture sensitivity level is 1, epoxy meets UL 94 V-0 flammability rating, and the part is RoHS compliant.
Bipolar (BJT) Transistor NPN 100V 1A 140MHz 900mW Through Hole TO-92MOD
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-2SD667A-D-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | NPN |
