Micro Commercial Components Corp. Single Bipolar Transistors 2SB1386-R-TP

PNP silicon epitaxial transistor for general-purpose amplification and switching, available in SOT-89 package with dimensions of 4.30-4.70 mm (A), 3.91-4.35 mm (C), and 2.75 mm (M). Rated for collector-emitter voltage of -20 V, collector current of -5.0 A, and collector power dissipation of 500 mW. Operating junction and storage temperature range is -55℃ to +150℃. Thermal resistance is 250℃/W. DC current gain (hFE) ranges from 180 to 390 for the R variant. Collector-emitter saturation voltage is -1.0 V at -4 A collector current. Transition frequency is 120 MHz. Meets UL 94 V-0 flammability rating and is RoHS compliant. Halogen-free per "Green" device definition.