The 2SB1197 is a PNP silicon epitaxial transistor in an SOT-23 package, rated for a collector-emitter voltage of -32 V and a continuous collector current of -800 mA, with a power dissipation of 200 mW and a junction temperature range of -55°C to +150°C. It has a DC current gain (hFE) range of 180-390 for the R grade, a collector-emitter saturation voltage of -0.5 V at -500 mA collector current, and a transition frequency of 50 MHz. The device is RoHS compliant, halogen-free, meets UL 94 V-0 flammability rating, and has moisture sensitivity level 1. Dimensions are 2.80-3.04 mm in length, 2.10-2.64 mm in width, and 1.20-1.40 mm in height. Thermal resistance is 625°C/W.
TRANS PNP 32V 0.8A SOT-23
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-2SB1197-R-TP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |