The 2SA950-Y-BP is a PNP silicon bipolar transistor in a TO-92 package, designed for 1W output applications. It has a collector-emitter voltage rating of -30V, a collector current of -800mA, and a collector power dissipation of 600mW. The junction temperature ranges from -55°C to +150°C. Electrical characteristics include a DC current gain (hFE) of 160 to 320 at -100mA collector current, a collector-emitter saturation voltage of up to 0.7V, and a transition frequency of 120MHz. The device meets UL 94 V-0 flammability requirements and is RoHS compliant. Moisture sensitivity level is 1. The part is supplied in bulk packaging.
Bipolar (BJT) Transistor PNP 30V 800mA 120MHz 600mW Through Hole TO-92
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-2SA950-Y-BP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |