The 2SA812 is a PNP silicon bipolar transistor in an SOT-23 package, designed for general-purpose switching and amplification applications. It has a collector-base voltage rating of -60 V, a collector-emitter voltage rating of -50 V, and a continuous collector current of -100 mA. Power dissipation is rated at 200 mW with a thermal resistance of 625 °C/W. The junction and storage temperature range is -55 °C to +150 °C. It features a DC current gain (hFE) range of 300 to 600 for the M7 grade, a collector-emitter saturation voltage of -0.3 V at -100 mA collector and -10 mA base current, and a transition frequency of 180 MHz. The device is halogen-free, RoHS compliant, and meets UL 94 V-0 flammability standards. Moisture sensitivity level is 1.
TRANS PNP 50V 0.1A SOT-23
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-2SA812-M7-TP-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |