The 2SA1013-Y is a PNP silicon epitaxial transistor designed for general-purpose amplification and switching, housed in a TO-92MOD package with a power dissipation of 0.9 W. It has a collector-emitter breakdown voltage of -160 V and a collector current rating of -1.0 A. The device operates over a junction temperature range of -55°C to +150°C, with a DC current gain (hFE) range of 200 to 300, a collector-emitter saturation voltage of -1.5 V at -500 mA collector current, and a transition frequency of 15 MHz. It meets UL 94 V-0 flammability standards, is RoHS compliant, and has a moisture sensitivity level of 1. The 'Y' suffix denotes a specific hFE gain bin, and the '-AP' suffix indicates ammo packing format.
Bipolar (BJT) Transistor PNP 160V 1A 15MHz 900mW Through Hole TO-92MOD
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 353-2SA1013-Y-APTB-ND |
| Product Name | Single Bipolar Transistors |
| Polarity | PNP |