Microdiode Electronics (Shenzhen) Co., Ltd. Single Bipolar Transistors MMBT2907A

Description
TRANS PNP 60V SOT23
Description
TRANS PNP 60V SOT23
Datasheet
Datasheet Summary
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PNP silicon transistor in SOT-23 package for surface-mount applications, with a collector current rating of -600 mA, collector power dissipation of 250 mW, and collector-emitter voltage of -60 V. Operating junction temperature ranges from -55°C to +150°C. Package dimensions conform to JEDEC SOT-23 standard, with a tape-and-reel packaging of 3,000 pieces per reel. Complies with RoHS and RoHS III directives. Meets MIL-STD-750 for solderability, mechanical strength, and reliability testing. Thermal resistance junction-to-ambient is 500 °C/W.

Datasheet Summary
Powered by GS/AI

PNP silicon transistor in SOT-23 package for surface-mount applications, with a collector current rating of -600 mA, collector power dissipation of 250 mW, and collector-emitter voltage of -60 V. Operating junction temperature ranges from -55°C to +150°C. Package dimensions conform to JEDEC SOT-23 standard, with a tape-and-reel packaging of 3,000 pieces per reel. Complies with RoHS and RoHS III directives. Meets MIL-STD-750 for solderability, mechanical strength, and reliability testing. Thermal resistance junction-to-ambient is 500 °C/W.

Suppliers

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Product
Description
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Single Bipolar Transistors - MMBT2907A - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
MMBT2907A
Single Bipolar Transistors MMBT2907A
TRANS PNP 60V SOT23

TRANS PNP 60V SOT23

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global)
Product Category Bipolar RF Transistors
Product Number MMBT2907A
Product Name Single Bipolar Transistors
Polarity PNP; PNP
Package Type SOT23; TO-236-3, SC-59, SOT-23-3
VCEO 60 volts
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