Messenko Semiconductor Semiconductor Power Modules PTVSHC2EN4V5B-MS

Description
1.2kW@8/20us 13V 4.6V 4.5V DFN1610-2 ESD and Surge Protection (TVS/ESD) ROHS
  • Semiconductor Power Modules - PTVSHC2EN4V5B-MS - ODG (Origin Data Global)
    ODG (Origin Data Global)
Request a Quote
Description
1.2kW@8/20us 13V 4.6V 4.5V DFN1610-2 ESD and Surge Protection (TVS/ESD) ROHS
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Semiconductor Power Modules - PTVSHC2EN4V5B-MS - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Semiconductor Power Modules
PTVSHC2EN4V5B-MS
Semiconductor Power Modules PTVSHC2EN4V5B-MS
1.2kW@8/20us 13V 4.6V 4.5V DFN1610-2 ESD and Surge Protection (TVS/ESD) ROHS

1.2kW@8/20us 13V 4.6V 4.5V DFN1610-2 ESD and Surge Protection (TVS/ESD) ROHS

Supplier's Site

Technical Specifications

  ODG (Origin Data Global)
Product Category Semiconductor Power Modules
Product Number PTVSHC2EN4V5B-MS
Product Name Semiconductor Power Modules
Unlock Full Specs
to access all available technical data

Similar Products

Power Driver Modules - TR10140962NOSA1 - ODG (Origin Data Global)
Infineon Technologies AG
Power Driver Modules
TR10140962NOSA1
Specs
Technology IGBT
View Details
IGBT Modules IPM - 6th-Gen V Series Model 7MBP75VDN120-50 - Fuji Electric Corp. of America
Fuji Electric Corp. of America
IGBT Modules IPM
6th-Gen V Series Model 7MBP75VDN120-50
Specs
Technology IGBT; Intelligent Power Module (IPM)
Package P630
Output Voltage 1200 volts
View Details
1200V/Phase leg/SiC Mosfet modules - MSCSM120AM042CD3AG-Module - Microchip Technology, Inc.
Microchip Technology, Inc.
1200V/Phase leg/SiC Mosfet modules
MSCSM120AM042CD3AG-Module
Specs
Technology MOSFET; SiC
Output Voltage 1200 volts
Output Current 394 amps
View Details
IGBT Modules - - Kyocera Corporation
Kyocera Corporation
IGBT Modules
Specs
Technology IGBT
View Details