MDE Semiconductor, Inc. TVS Diode Series SMD30KPA17A/CA – SMD30KPA280A

Description
Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.
Description
Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.
Datasheet
Datasheet Summary
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The SMD30KPA17A/CA to SMD30KPA280A series from MDE Semiconductor, Inc. consists of silicon avalanche high surge diodes designed for transient voltage suppression. These diodes feature a glass passivated chip junction and exhibit bipolar electrical characteristics. They are capable of handling peak pulse power up to 30,000 watts on a 10/1000 microsecond waveform, making them suitable for protecting electronic systems from high-energy transients. The series includes various part numbers with reverse stand-off voltages ranging from 17 volts to 280 volts. The breakdown voltage for the SMD30KPA280A is specified at 312.8 volts, with a peak pulse current rating of 65.3 A. The devices demonstrate excellent clamping capability and low incremental surge resistance, with a fast response time typically less than 1.0 picosecond from 0 volts to breakdown voltage. These diodes are designed for any mounting position and have a weight of approximately 2.2 grams. They are solderable per MIL-STD-750, Method 2026, ensuring compatibility with standard assembly processes. The SMD30KPA series is suitable for applications requiring robust protection against lightning, ESD, and other transient events.

Datasheet Summary
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The SMD30KPA17A/CA to SMD30KPA280A series from MDE Semiconductor, Inc. consists of silicon avalanche high surge diodes designed for transient voltage suppression. These diodes feature a glass passivated chip junction and exhibit bipolar electrical characteristics. They are capable of handling peak pulse power up to 30,000 watts on a 10/1000 microsecond waveform, making them suitable for protecting electronic systems from high-energy transients. The series includes various part numbers with reverse stand-off voltages ranging from 17 volts to 280 volts. The breakdown voltage for the SMD30KPA280A is specified at 312.8 volts, with a peak pulse current rating of 65.3 A. The devices demonstrate excellent clamping capability and low incremental surge resistance, with a fast response time typically less than 1.0 picosecond from 0 volts to breakdown voltage. These diodes are designed for any mounting position and have a weight of approximately 2.2 grams. They are solderable per MIL-STD-750, Method 2026, ensuring compatibility with standard assembly processes. The SMD30KPA series is suitable for applications requiring robust protection against lightning, ESD, and other transient events.

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TVS Diode Series - SMD30KPA17A/CA – SMD30KPA280A - MDE Semiconductor, Inc.
Newport Beach, CA, United States
Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.

Our Transient Voltage Suppression (TVS diode) Devices are designed specifically for the protection of electronic systems from the destructive effects of Lightning, Electrostatic Discharge (ESD), Nuclear Electromagnetic Pulse (NEMP), and Inductive Switching. All silicon TVS diode devices are constructed with our famous low leakage glass passivation process with high-energy absorption capability from 400 watts up to 100 ,000 watts. Breakdown Voltages start at 5.0 voltages up to 400 volts. These TVS diode devices are UL Recognized components.

Supplier's Site Datasheet

Technical Specifications

  MDE Semiconductor, Inc.
Product Category Transient Voltage Suppressor Diodes (TVS)
Product Number SMD30KPA17A/CA – SMD30KPA280A
Product Name TVS Diode Series
Configuration Single
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